Dual N+P Channel IRF7420TRPBF ±5.3A 20V SOIC-8 0.045Ω Rds(on) 1.8V Logic Level Fast Switching High Efficiency Power Management Space-Saving Design
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
Applications
Power Management Modules (PMIC): Widely used in motherboards, servers, network communication equipment, and portable electronics as load switches, power path management, and switching transistors in DC-DC synchronous buck/boost converters. Its integrated design significantly saves PCB space.
Motor Drive and Control: Ideal for driving small to medium-power DC motors, such as in robotics, automated equipment, and precision instruments, where it enables compact H-bridge or half-bridge circuits for motor direction and speed control.
Battery-Powered Devices: Used in smartphones, tablets, TWS earphone charging cases, portable medical devices, and more for battery protection circuits, charge/discharge management, and load switching. Its logic-level gate threshold (1.8V drive) and low on-resistance make it highly suitable for low-voltage, high-efficiency applications.
Signal Switching & Multiplexing: Applicable for routing analog or digital signals in test equipment, audio interfaces, or data acquisition systems.
Description
This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
INFORMATION
| Category | | |
| Mfr | | |
| Series | | |
| Packaging | Tape & Reel (TR) Cut Tape (CT) Digi-Reel® | |
| Part Status | | |
| FET Type | | |
| Technology | | |
| Drain to Source Voltage (Vdss) | | |
| Current - Continuous Drain (Id) @ 25°C | | |
| Drive Voltage (Max Rds On, Min Rds On) | | |
| Rds On (Max) @ Id, Vgs | | |
| Vgs(th) (Max) @ Id | | |
| Gate Charge (Qg) (Max) @ Vgs | | |
| Vgs (Max) | | |
| Input Capacitance (Ciss) (Max) @ Vds | | |
| FET Feature | | |
| Power Dissipation (Max) | | |
| Operating Temperature | | |
| Grade | | |
| Qualification | | |
| Mounting Type | | |
| Supplier Device Package | | |
| Package / Case | | |
| Base Product Number | |
Drawing
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Dual N+P Channel IRF7420TRPBF ±5.3A 20V SOIC-8 0.045Ω Rds(on) 1.8V Logic Level Fast Switching High Efficiency Power Management Space-Saving Design Images
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